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Kyoto University builds transistor that survives 600C temperatures, compatible with standard fabs — Standard ion implantation and bottom-gate design fix leakage and voltage drift

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Al Arabia News
ByAl Arabia News
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Kyoto University builds transistor that survives 600C temperatures, compatible with standard fabs — Standard ion implantation and bottom-gate design fix leakage and voltage drift

A research team at Kyoto University has built a silicon carbide transistor that operates at 600°C (873 K) using ion implantation.

Source: Tom's Hardware

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ByAl Arabia News
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The Al Arabia News newsroom desk, covering world, regional and business news around the clock.
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